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hebei jinglong I/E trade co.,ltd
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Item Spec
Crystal structure Mono-crystalline
Crystal method CZ
Conductance Type P
Dopant B
Dimension 125*125±0.4 125*125±0.4
Diameter F150±0.4 F165±0.4
Wafer thickness range 190/200±20µm 190/200±20µm
Crystal orientation <100>±1 <100>±1
Resistivity (O.cm) 1-3/3-6 1-3/3-6
Lifetime ( µs) =15 =15
Carbon concentration (atoms/cm3) =5*1016 =5*1016
Oxygen concentration (atoms/cm3) =0.95*1018 =0.95*1018
Etching Pit ( pcs/cm3 ) =2000 =2000
TTV =30µm =30µm
Camber =30µm =30µm
Saw mark =15µm (depth) =15µm(depth)
Wafer surface No crack, obvious pits, surface clean, no abnormal spots no pinholes.
Gap No
Edge defect Edge defect width=0.2mm, extention=0.5mm with total quantity=2,, distance=30mm
Luminance edge Length=1/2 of wafer dimension, width=1/3 of wafer thickness |
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